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NTGS3446 Power MOSFET 5.1 Amps, 20 Volts
N-Channel TSOP-6
Features
* * * * * * *
Ultra Low RDS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified IDSS Specified at Elevated Temperature Pb-Free Package Option for Green Manufacturing (G Suffix)
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V(BR)DSS 20 V
RDS(on) TYP 36 mW @ 4.5 V
ID MAX 5.1 A
Applications
N-Channel Drain 1 2 5 6
* Power Management in portable and battery-powered products, i.e. * Lithium Ion Battery Applications * Notebook PC
computers, printers, PCMCIA cards, cellular and cordless
Gate 3
MAXIMUM RATINGS (TC = 25C unless otherwise noted)
Rating Drain-to-Source Voltage Gate-to-Source Voltage Thermal Resistance Junction-to-Ambient (Note 1) Total Power Dissipation @ TA = 25C Drain Current - Continuous @ TA = 25C - Pulsed Drain Current (tp t 10 ms) Thermal Resistance Junction-to-Ambient (Note 2) Total Power Dissipation @ TA = 25C Drain Current - Continuous @ TA = 25C - Pulsed Drain Current (tp t 10 ms) Thermal Resistance Junction-to-Ambient (Note 3) Total Power Dissipation @ TA = 25C Drain Current - Continuous @ TA = 25C - Pulsed Drain Current (tp t 10 ms) Source Current (Body Diode) Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes for 10 seconds Symbol VDSS VGS RqJA Pd ID IDM RqJA Pd ID IDM RqJA Pd ID IDM IS TJ, Tstg TL Value 20 12 244 0.5 2.5 10 128 1.0 3.6 14 62.5 2.0 5.1 2.0 5.1 -55 to 150 260 Unit V V C/W Watts Amps Amps
1 5 6 4
Source 4
MARKING DIAGRAM
TSOP-6 CASE 318G STYLE 1 = Device Code = Work Week 446 W
2
3
C/W Watts Amps Amps C/W Watts Amps Amps A C C
446 W
PIN ASSIGNMENT
Drain Drain Source 654
1 23 Drain Drain Gate
ORDERING INFORMATION
Device NTGS3446T1 NTGS3446T1G Package TSOP-6 TSOP-6 (Pb-Free) Shipping 3000/Tape & Reel 3000/Tape & Reel
1. Minimum FR-4 or G-10PCB, operating to steady state. 2. Mounted onto a 2" square FR-4 board (1" sq. 2 oz. cu. 0.06" thick single-sided), operating to steady state. 3. Mounted onto a 2" square FR-4 board (1" sq. 2 oz. cu. 0.06" thick single-sided), t < 5.0 seconds.
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2003
1
November, 2003 - Rev. 3
Publication Order Number: NTGS3446/D
NTGS3446
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Collector Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 85C) Gate-Body Leakage Current (VGS = 12 Vdc, VDS = 0) ON CHARACTERISTICS (Note 4) Gate Threshold Voltage ID = 0.25 mA, VDS = VGS Temperature Coefficient (Negative) Static Drain-to-Source On-Resistance (VGS = 4.5 Vdc, ID = 5.1 Adc) (VGS = 2.5 Vdc, ID = 4.4 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 5.1 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 5) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge (VDS = 10 Vdc, ID = 5.1 Adc, VGS = 4.5 Vdc) SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage (Note 4) (IS = 1.7 Adc, VGS = 0 Vdc) (IS = 1.7 Adc, VGS = 0 Vdc, TJ = 85C) Reverse Recovery Time (IS = 1.7 Adc, VGS = 0 Vdc, 1 7 Adc Vdc diS/dt = 100 A/ms) Reverse Recovery Stored Charge 4. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 5. Switching characteristics are independent of operating junction temperature. VSD - - trr ta tb QRR - - - - 0.74 0.66 20 11 9.0 0.01 1.1 - - - - - mC ns Vdc (VDD = 10 Vdc, ID = 1.0 Adc, VGS = 4.5 Vdc, RG = 6.0 W) td(on) tr td(off) tf QT Qgs Qgd - - - - - - - 9.0 12 35 20 8.0 2.0 2.0 16 20 60 35 15 - - nC ns (VDS = 10 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss Coss Crss - - - 510 200 60 750 350 100 pF VGS(th) 0.6 - RDS(on) - - gFS - 36 44 12 45 55 - mhos 0.85 -2.5 1.2 - Vdc mV/C mW V(BR)DSS 20 - IDSS - - IGSS(f) IGSS(r) - - - - - - 1.0 25 100 -100 nAdc - 22 - - Vdc mV/C mAdc Symbol Min Typ Max Unit
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NTGS3446
RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)
1.8 1.6 1.4 t, TIME (ns) 1.2 1 0.8 0.6 0.4 -50 ID = 5.1 A VGS = 4.5 V
100 td(off) tf tr 10 td(on) VDD = 10 V ID = 1.0 A VGS = 4.5 V -25 0 25 50 75 100 125 150 1 1 10 RG, GATE RESISTANCE (W) 100
TJ, JUNCTION TEMPERATURE (C)
Figure 1. On-Resistance Variation with Temperature
Figure 2. Resistive Switching Time Variation vs. Gate Resistance
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NTGS3446
PACKAGE DIMENSIONS
TSOP-6 CASE 318G-02 ISSUE H
A L
6 5 1 2 4 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. DIM A B C D G H J K L M S MILLIMETERS MIN MAX 2.90 3.10 1.30 1.70 0.90 1.10 0.25 0.50 0.85 1.05 0.013 0.100 0.10 0.26 0.20 0.60 1.25 1.55 0_ 10 _ 2.50 3.00 DRAIN DRAIN GATE SOURCE DRAIN DRAIN INCHES MIN MAX 0.1142 0.1220 0.0512 0.0669 0.0354 0.0433 0.0098 0.0197 0.0335 0.0413 0.0005 0.0040 0.0040 0.0102 0.0079 0.0236 0.0493 0.0610 0_ 10 _ 0.0985 0.1181
S
B
D G M 0.05 (0.002) H C K J
STYLE 1: PIN 1. 2. 3. 4. 5. 6.
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NTGS3446/D

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